Enhanced optical properties of the GaAsNÕGaAs quantum-well structure by the insertion of InAs monolayers
نویسندگان
چکیده
Microstructural and optical properties of InAs-inserted and reference single GaAsN/GaAs quantum-well ~QW! structures grown by metalorganic chemical vapor deposition were investigated using cross-sectional transmission electron microscopy and photoluminescence ~PL!. Significant enhancement of PL intensity and a blueshift of PL emission were observed from the InAs-inserted GaAsN/GaAs QW structure, compared with the single GaAsN/GaAs QW structure. Strain compensation and In-induced reduction of N incorporation are suggested to be two major factors affecting the optical properties. © 2004 American Institute of Physics. @DOI: 10.1063/1.1697628#
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